FDMC010N08C دیتاشیت

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دانلود دیتاشیت FDMC010N08C	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDMC010N08C
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 2.4W;52W
Total Gate Charge (Qg@Vgs): 22nC@10V
Drain Source Voltage (Vdss): 80V
Input Capacitance (Ciss@Vds): 1500pF@40V
Continuous Drain Current (Id): 11A;51A
Gate Threshold Voltage (Vgs(th)@Id): 4V@90uA
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@16A,10V
Package: Power-33
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 40V
FET Feature: -
Power Dissipation (Max): 2.4W (Ta), 52W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: Power33
Package / Case: 8-PowerWDFN
Base Part Number: FDMC01
detail: N-Channel 80V 11A (Ta), 51A (Tc) 2.4W (Ta), 52W (Tc) Surface Mount Power33